| Autor: |
Look, D. C., Walters, D. C., Sewell, J. S., Dudley, S. C., Mier, M. G., Sizelove, J. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1989, Vol. 65 Issue 3, p1375, 3p, 3 Diagrams, 1 Graph |
| Abstrakt: |
Proposes a technique for whole-wafer etch-pit density (EPD) mapping in gallium arsenide (GaAs). Derivation of the quantitative relationship between fractional transmission and EPD; Illustration of an automated absorption apparatus useful in EPD mapping; Property of the pits formed on an etched GaAs surface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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