Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes.
| Autor: | Higman, J. M., Kim, K., Hess, K., van Zutphen, T., Boots, H. M. J. |
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| Zdroj: | Journal of Applied Physics; 2/1/1989, Vol. 65 Issue 3, p1384, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: | Presents the results of a Monte Carlo simulation of silicon (Si) and gallium arsenide (GaAs) electron emitting diodes. Analysis of the calculated efficiency of Si and GaAs; Effects which contribute to the lower efficiency of GaAs; Properties of Si materials. |
| Databáze: | Complementary Index |
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