| Autor: |
Greve, David W., Hay, Valerie R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1987, Vol. 61 Issue 3, p1176, 5p |
| Abstrakt: |
Presents an interpretation of the capacitance-voltage characteristics of polycrystalline silicon thin-film transistors. Description of a transmission line model of the gate-to-channel capacitance developed in the study; Comparison of the model with measurements made on unpassivated polycrystalline silicon thin-film transistors; Influence of semiconductor traps and insulator charge on the measured capacitance. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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