| Autor: |
McMarr, P. J., Vedam, K., Narayan, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1986, Vol. 59 Issue 3, p694, 8p, 1 Black and White Photograph, 4 Diagrams, 4 Charts, 6 Graphs |
| Abstrakt: |
Presents a study that demonstrated the ability of spectroscopic ellipsometry to analyze the multilayer surface structure of an implanted semiconductor. Resolution of the semiconductor; Analysis of spectroscopic ellipsometric data on a number of self-ion-implanted silicon samples; Use of the regression analysis technique. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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