Influence of transmission resonance on carrier collection in a semiconductor quantum well.

Autor: Zohta, Yasuhito
Předmět:
Zdroj: Journal of Applied Physics; 2/1/1986, Vol. 59 Issue 3, p962, 3p, 1 Diagram, 1 Graph
Abstrakt: Presents a study that found that the carrier collection in a quantum well becomes very effective when the quantum well thickness satisfies a transmission resonance condition. Reason for its effectiveness; Role of the transmission resonance in determining current-voltage characteristics of a diode; Definition of transmission resonance.
Databáze: Complementary Index