| Autor: |
Vasquez, R. P., Madhukar, A., Grunthaner, F. J., Naiman, M. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1986, Vol. 59 Issue 3, p972, 4p, 2 Graphs |
| Abstrakt: |
Presents a study that explained nitrogen distributions in silicon (Si) dioxide films on Si, which have been thermally nitrided at 1000 degree Celsius, by a kinetic model of the nitridation process. Validity of the predictions regarding nitrogen distributions obtained at other nitridation temperatures; Consistency of the nitrogen distributions with the model; Correlation of the intensity of the fluorine marker with nitrogen distribution. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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