| Autor: |
Pettersson, P. O., Miles, R. J., McGill, T. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1994, Vol. 76 Issue 11, p7328, 4p, 3 Diagrams, 1 Chart, 1 Graph |
| Abstrakt: |
Presents a study that examined the surface morphology of silicon, grown on epitaxial CaF[sub2]/Si by electron-beam-assisted molecular-beam epitaxy. Description of the sample structure and the low-energy electron-diffraction, atomic force microscopy and x-ray photolectron spectroscopy; Reason for the large confidence interval observed; Analysis of the chemical reaction theory. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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