Hydrogen passivation effects in InGaAlP and InGaP.

Autor: Gorbylev, V. A., Chelniy, A. A., Polyakov, A. Y., Pearton, S. J., Smirnov, N. B., Wilson, R. G., Milnes, A. G., Cnekalin, A. A., Govorkov, A. V., Leiferov, B. M., Borodina, O. M., Balmashnov, A. A.
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Zdroj: Journal of Applied Physics; 12/1/1994, Vol. 76 Issue 11, p7390, 9p, 19 Graphs
Abstrakt: Focuses on a study that examined the effects of hydrogen treatment on electrical properties, luminescence spectra and deep traps in InGaAlP and InGaP. Influence of hydrogen treatment mode on hydrogen concentration and hydrogen profiles in InGaAlP; Measurement of the luminescence spectra in InGaAlP; Changes observed in carrier concentration.
Databáze: Complementary Index