| Autor: |
Yu, P. W., Jogai, B., Rogers, T. J., Martin, P. A., Ballingall, J. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1994, Vol. 76 Issue 11, p7535, 6p, 2 Charts, 9 Graphs |
| Abstrakt: |
Presents a study that determined the temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor Al[subx]Ga[sub1-xAs/ In[suby]Ga[sub1-y]As/GaAs structures. Analysis of transition energies; Factor to which the dominant emissions at low temperatures are attributed; Relative intensities of the transitions from the first and second electron subbands to the first heavy-hole subband; Calculation of the exchange-correlation potential. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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