| Autor: |
Hallberg, Tomas, Lindström, J. Lennart |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1992, Vol. 72 Issue 11, p5130, 9p, 3 Charts, 9 Graphs |
| Abstrakt: |
Presents a study that investigated the precipitation of oxygen for 2 megaelectronvolt electron irradiated silicon samples with irradiation doses. Presence of different concentrations of the vacancy-dioxygen center created at the irradiation in the samples; Irradiation dose dependence of the incubation time and oxygen decay rate for the precipitation process; Explanation for the enhanced precipitation among vacancy-dioxygen samples. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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