| Autor: |
Jackson, Clayton A., Moetakef, Pouya, James Allen, S., Stemmer, Susanne |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/4/2012, Vol. 100 Issue 23, p232106, 3p, 1 Diagram, 1 Graph |
| Abstrakt: |
We report on capacitance-voltage (C-V) analysis of SrTiO3/GdTiO3 heterostructures that contain a high-density, two-dimensional electron gas (2DEG) at the interface. The complex admittance was measured as a function of frequency for different gate biases applied to a Schottky contact on the SrTiO3. A one-dimensional, complex impedance transmission line model was used to extract C-V characteristics from the frequency dependent admittance. The extracted capacitance was nearly independent of the gate voltage (up to -0.5 V), indicating a fully depleted SrTiO3 layer. The results are used to estimate the dielectric constant of the SrTiO3, the degree of modulation of the 2DEG by the maximum applied voltage (∼2.5%), and to establish an upper limit of the residual carrier density in the bulk of the SrTiO3 film (∼9 × 1018 cm-3). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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