| Autor: |
Smith, J. H., Fonash, S. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1992, Vol. 72 Issue 11, p5305, 6p, 1 Chart, 7 Graphs |
| Abstrakt: |
Presents a study that investigated den Boer analysis' assumptions of 0 K occupation statistics, a spatially uniform distribution of injected charge carriers, spatially uniform material, no generation/recombination and no contact effects. Use of the den Boer analysis of single carrier space charge limited currents to determine the density of states function within the gap of amorphous silicon hydride; Accuracy of the den Boer analysis; Features of the density of states. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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