| Autor: |
Sakuma, Y., Ozeki, M., Ohtsuka, N., Kodama, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1990, Vol. 68 Issue 11, p5660, 5p, 2 Diagrams, 1 Chart, 3 Graphs |
| Abstrakt: |
Presents a comparative study on self-limiting growth of gallium arsenide (GaAs) using different gallium-alkyl compounds. Growth technique used to prepare semiconductor materials with atomically controlled thickness and abrupt heterointerfaces; Details of experimental techniques used; Investigation of the dynamics of the chemical state of the trimethylgallium-exposed GaAs surface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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