| Autor: |
Koenig, E. T., Huang, C. I., Jogai, B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1990, Vol. 68 Issue 11, p5905, 3p, 2 Charts, 1 Graph |
| Abstrakt: |
Presents a study that showed the independence of peak current from emitter space layer width in AlGaAs/gallium arsenide resonant tunneling diodes. Calculation of the conduction band for the theoretical analysis of the resonant tunneling diodes; Description of the high electron density typical of the accumulation region; Direct source of tunneling electrons in the devices. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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