| Autor: |
Henry, A., Awadelkarim, O. O., Lindström, J. L., Oehrlein, G. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1989, Vol. 66 Issue 11, p5388, 6p, 8 Graphs |
| Abstrakt: |
Presents a study which examined the effect of reactive-ion etching and plasma etching using deuterium on the electrical properties of boron-doped p-type silicon employing junction capacitance measurements on Schottky diodes. Experimental procedure followed; Theory of data analysis; Results of the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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