| Autor: |
Kuesters, K.-H., De Cooman, B. C., Carter, C. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1985, Vol. 58 Issue 11, p4065, 9p, 6 Black and White Photographs, 7 Diagrams |
| Abstrakt: |
Presents a study that examined the dislocation motion in gallium arsenide/aluminum gallium arsenide semiconductors using transmission electron microscopy. Analysis of the dislocation configuration at scratches; Evaluation of the alignment of dislocations parallel to the heterojunction; Examination of the development of dislocation dipoles at the pinning points. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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