Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen.

Autor:	Mu, X. C., Fonash, S. J., Yang, B. Y., Vedam, K., Rohatgi, A., Rieger, J.
Předmět:	CRYSTALS SILICON PLASMA etching SPECTRUM analysis ELLIPSOMETRY
Zdroj:	Journal of Applied Physics; 12/1/1985, Vol. 58 Issue 11, p4282, 10p, 2 Black and White Photographs, 5 Graphs
Abstrakt:	Presents a study which compared damage produced in single-crystal silicon by two dry etching techniques using spectroscopic ellipsometry. Experimental procedure; Results and discussion; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu