Monte Carlo simulation of electron transport in gallium nitride.

Autor: Gelmont, B., Kim, K., Shur, M.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1993, Vol. 74 Issue 3, p1818, 4p, 4 Graphs
Abstrakt: Presents the results of an ensemble Monte Carlo simulation of the electron transport in gallium nitride. Role of intervalley electron transfer in gallium-nitrogen in high electric fields; Factor that makes a strongly inverted electron distribution; Analytic expression for the polar optical momentum relaxation time for phonon energies larger than the thermal energy.
Databáze: Complementary Index