Characterization of metalorganic chemical vapor deposition grown GaAs on Si by means of x-ray scattering radiography.

Autor:	Suzuki, Yoshifumi, Chikaura, Yoshinori
Předmět:	CHEMICAL vapor deposition GALLIUM arsenide SILICON X-ray scattering RADIOGRAPHY
Zdroj:	Journal of Applied Physics; 8/1/1991, Vol. 70 Issue 3, p1290, 5p, 6 Diagrams, 2 Graphs
Abstrakt:	Presents a study that characterized metalorganic chemical vapor deposition grown gallium arsenide on silicon by means of x-ray scattering radiography. Details of the experiment; Results and discussion; Conclusions.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu