Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors.

Autor: Laikhtman, B., Kiehl, R. A., Frank, D. J.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1991, Vol. 70 Issue 3, p1531, 8p, 9 Graphs
Abstrakt: Presents a study which utilized a model of an infinite well to perform calculations of the valence band structure and obtained analytical expressions for wave functions in a strained quantum well. Analytical solution for the quantum well dispersion relation and wave functions; Structure of a quantum well band; Conclusion.
Databáze: Complementary Index