| Autor: |
Lee, Chong Mu, Han, Suk Bin, Im, Ho Bin, Lee, Jong Gil |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1991, Vol. 70 Issue 3, p1742, 8p |
| Abstrakt: |
Presents information on a study which investigated the effects of phosphorus doping level in the polycrystalline silicon layer of unannealed and annealed WSi[sub2.6]-polysilicon composite films on the growth kinetics of the tungsten silicide. Annealing of some of the deposited films; Results of Auger electron spectroscopy; Effect of phosphorus doping level on the linear rate constant of the tungsten silicide; Analysis of wet oxidation experiments performed. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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