High resolution electron beam lithography with a polydiacetylene negative resist at 50 kV.

Autor: Dobisz, E. A., Marrian, C. R. K., Colton, R. J.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1991, Vol. 70 Issue 3, p1793, 7p
Abstrakt: Presents information on a study which examined the exposure behavior and the resolution that can be obtained by a poly-[5,7-(bis-1,12-n-butylcarboxy-methylene-urethane) dodecadiyne] (P4BCMU) resist system. Definition of the lithographic patterns; Pixel exposure results; Line exposure results; Discussion of electron scattering processes.
Databáze: Complementary Index