Ultrahigh vacuum studies of Pd metal-insulator-semiconductor diode H2 sensors.
| Autor: | Rye, R. R., Ricco, A. J. |
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| Zdroj: | Journal of Applied Physics; 8/1/1987, Vol. 62 Issue 3, p1084, 9p |
| Abstrakt: | Investigates the hydrogen sensitivity and kinetic characteristics of palladium metal-insulator-semiconductor devices in ultrahigh vacuum where surface contamination is not a problem. Representative time-dependent diode response for a series of pressure jumps; Relationship between two types of energy terms; Overview of calculated steady-state ratios of the surface-to-bulk transfer rate to the rate of chemisorption as a function of hydrogen pressure. |
| Databáze: | Complementary Index |
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