Behavior of SiNx films as masks for Zn diffusion.

Autor: Zou, W. X., Vawter, G. A., Merz, J. L., Coldren, L. A.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1987, Vol. 62 Issue 3, p828, 4p
Abstrakt: Investigates the behavior of silicon nitride thin films as masks of zinc diffusion. Applications of the selective zinc diffusion into III-V compound semiconductors; Details on the experiment; Discussion on the results of the study.
Databáze: Complementary Index