Nontrap capacitance dispersion in Se-Schottky diodes.

Autor: Champness, C. H.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1987, Vol. 62 Issue 3, p917, 5p
Abstrakt: Studies nontrap capacitance dispersion in selenium Schottky diodes. Methodology used in the study; Fabrication of the diodes; Measurements of dark current-voltage characteristics.
Databáze: Complementary Index