| Autor: |
Hornsey, R. I., Thornton, T. J., Cleaver, J. R. A., Ahmed, H. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 4/1/1993, Vol. 73 Issue 7, p3203, 8p, 1 Black and White Photograph, 3 Diagrams, 5 Graphs |
| Abstrakt: |
Presents an investigation of mesoscopic structures fabricated by channeled silicon [sup++] ion implantation of deep heterostructures. Electrical characteristics of high-quality two-dimensional electron gas; Characterization of channeled ion implantation; Advantages of channeled ion implantation isolaton for the fabrication of devices in high-quality two-dimensional electron gas. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
