Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped Hg0.8Cd0.2Te on (100) Cd0.96Zn0.04Te.

Autor: He, L., Becker, C. R., Bicknell-Tassius, R. N., Scholl, S., Landwehr, G.
Předmět:
Zdroj: Journal of Applied Physics; 4/1/1993, Vol. 73 Issue 7, p3305, 8p, 1 Black and White Photograph, 1 Diagram, 5 Graphs
Abstrakt: Investigates the structural and electrical properties of (100) Hg[sub1-x]Cd[subx]Te epilayers grown by molecular beam epitaxy for Hg/Te flux ratios. Effects of Hg flux on pyramidal hillock density; Approach in carrying out epitaxial growth; Influence of the Hg/Te flux ratio during growth on the structural and electrical properties of narrow gap Hg[sub1-x]Cd[subx]Te.
Databáze: Complementary Index