| Autor: |
Amore Bonapasta, A., Bonanni, B., Capizzi, M., Cherubini, L, Emiliani, V., Frova, A., Sacks, R. N., Sarto, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1993, Vol. 73 Issue 7, p3326, 6p, 1 Diagram, 3 Charts, 3 Graphs |
| Abstrakt: |
Investigates the energy levels of the complexes formed by gallium vacancies binding deuterium atoms by low-temperature photoluminescence. Possible GaAs configurations for a gallium vacancy binding hydrogen atoms; Characteristics of the emission bands in deuterated GaAs; Example of Gaussian deconvolution of the emission bands. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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