Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation.
| Autor: | de la Houssaye, Paul R., Penchina, Claude M., Hewett, Charles A., Zeidler, James R., Wilson, Robert G. |
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| Zdroj: | Journal of Applied Physics; 4/1/1992, Vol. 71 Issue 7, p3220, 5p, 1 Diagram, 5 Graphs |
| Abstrakt: | Presents information on a study that implanted boron ions in a natural IIa diamond at a substrate temperature of 80 Kelvin. Experimental procedure; Results and discussion; Conclusions. |
| Databáze: | Complementary Index |
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