High quality In0.15Ga0.85As/AlxGa1-xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy.
| Autor: | Buydens, Luc, Demeester, Piet, Yu, ZongQiang, Van Daele, Peter |
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| Zdroj: | Journal of Applied Physics; 4/1/1992, Vol. 71 Issue 7, p3249, 7p, 1 Diagram, 7 Graphs |
| Abstrakt: | Presents information on a study that investigated the growth of In[sub0.15]Ga[sub0.85]As/Al[subx]Ga[sub1 x] strained layer multi quantum wells with the metalorganic vapor phase epitaxy technique. Experimental procedure; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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