Electrical characterization of p-type ZnSe:Li epilayers grown on p+-GaAs by molecular-beam epitaxy.
| Autor: | Marshall, T., Cammack, D. A. |
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| Zdroj: | Journal of Applied Physics; 4/1/1991, Vol. 69 Issue 7, p4149, 3p, 1 Chart, 3 Graphs |
| Abstrakt: | Provides information on a study concerning the electrical characterization of lithium-doped zinc and selenium epilayers. Application of molecular-beam epitaxy on zinc and selenium; Discussion of the mechanisms of two-terminal vertical transport structures; Data analysis using equivalent-circuit model. |
| Databáze: | Complementary Index |
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