| Autor: |
Andrieu, S., d’Avitaya, F. Arnaud, Pfister, J. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1989, Vol. 65 Issue 7, p2681, 7p, 2 Diagrams, 1 Chart, 2 Graphs |
| Abstrakt: |
Presents a study that explained dopant surface segregation during two-dimensional growth in silicon and gallium arsenide molecular beam epitaxy. Analysis of the dopant behavior; Estimation of the incorporation coefficient; Equations and predictions associated with dopant surface segregation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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