Molecular-beam-epitaxial growth and characterization of high-quality alloys and multiple quantum wells on InP substrates using a post-evaporation-heated arsenic source.
| Autor: | Leavitt, R. P., Bradshaw, J. L. |
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| Zdroj: | Journal of Applied Physics; 9/15/1994, Vol. 76 Issue 6, p3429, 14p, 1 Chart, 13 Graphs |
| Abstrakt: | Reports on the growth of high-quality As-based ternary and quaternary alloys lattice matched to InP using a valved arsenic source that can post-heat the As beam after evaporation. Experimental details; Results and discussion. |
| Databáze: | Complementary Index |
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