Instabilities in the resistivity of intrinsic polysilicon resistors during hydrogenation: Role of sodium and cooling kinetics.
| Autor: | Moore, Chad B., Ast, Dieter G. |
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| Zdroj: | Journal of Applied Physics; 9/15/1994, Vol. 76 Issue 6, p3579, 4p |
| Abstrakt: | Examines the influence of the hydrogenation procedure on the occasional collapse of the resistivity of intrinsic polysilicon during hydrogenation. Polysilicon base materials used; Results; Data on sodium's influence on the resistivity after consecutive surface treatments. |
| Databáze: | Complementary Index |
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