| Autor: |
Ishida, Toshiki, Ikoma, Hideaki |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/1993, Vol. 74 Issue 6, p3977, 6p, 1 Diagram, 10 Graphs |
| Abstrakt: |
Presents a study which measured the bias dependence of Schottky barrier height using an internal photoemission effect in Au-n-GaAs Schottky barrier diodes. Details of the experimental procedures; Comparison of the bias dependence derived from dark forward current-voltage characteristics; Analysis of the forward current-voltage characteristics. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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