Autor: |
Ishida, Toshiki, Ikoma, Hideaki |
Předmět: |
|
Zdroj: |
Journal of Applied Physics; 9/15/1993, Vol. 74 Issue 6, p3977, 6p, 1 Diagram, 10 Graphs |
Abstrakt: |
Presents a study which measured the bias dependence of Schottky barrier height using an internal photoemission effect in Au-n-GaAs Schottky barrier diodes. Details of the experimental procedures; Comparison of the bias dependence derived from dark forward current-voltage characteristics; Analysis of the forward current-voltage characteristics. |
Databáze: |
Complementary Index |
Externí odkaz: |
|