Electrical and infrared investigation of erbium silicide.

Autor:	Unewisse, M. H., Storey, J. W. V.
Předmět:	SCHOTTKY barrier diodes SILICON INFRARED detectors FOURIER transform infrared spectroscopy
Zdroj:	Journal of Applied Physics; 9/15/1992, Vol. 72 Issue 6, p2367, 5p
Abstrakt:	Presents information on a study that examined the suitability of Schottky diodes fabricated from erbium silicide on n-type silicon as infrared detectors. Information on metal-silicides with low Schottky barriers; Use of a Fourier transform infrared spectrometer; Equations used in the study.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu