Oxidation of tin on silicon substrate by rapid isothermal processing.
| Autor: | Singh, R., Chou, P., Radpour, F., Nelson, A. J., Ullal, H. S. |
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| Zdroj: | Journal of Applied Physics; 9/15/1989, Vol. 66 Issue 6, p2381, 7p, 5 Charts, 11 Graphs |
| Abstrakt: | Reports on an oxidation study of tin overlayer on silicon substrate carried out at 400 °C by rapid isothermal processing and furnace processing. Experimental details; Results and discussion. |
| Databáze: | Complementary Index |
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