Growth of uniform epitaxial CoSi2 films on Si(111).

Autor: Fischer, A. E. M. J., Slijkerman, W. F. J., Nakagawa, K., Smith, R. J., van der Veen, J. F., Bulle-Lieuwma, C. W. T.
Předmět:
Zdroj: Journal of Applied Physics; 9/15/1988, Vol. 64 Issue 6, p3005, 9p, 2 Black and White Photographs, 2 Diagrams, 7 Graphs
Abstrakt: Analyzes the morphology of CoSi[sub2] films on silicon (111). Details on the experiment; Characterization of deposited layers; Possible causes of a change in morphology.
Databáze: Complementary Index