Al-related recombination center in polycrystalline Si.

Autor:	Rodot, M., Bourée, J. E., Mesli, A., Revel, G., Kishore, R., Pizzini, S.
Předmět:	MAGNETIC traps POLYCRYSTALS SILICON SPECTRUM analysis LASER spectroscopy
Zdroj:	Journal of Applied Physics; 9/15/1987, Vol. 62 Issue 6, p2556, 3p
Abstrakt:	Provides information on a study which investigated aluminum-related traps in polycrystalline silicon by deep-level transient spectroscopy and laser-beam-induced current measurements. Methods; Results; Discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu