| Autor: |
Johnson, S. M., Johnson, L. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/1986, Vol. 60 Issue 6, p2008, 8p, 1 Diagram, 1 Chart, 8 Graphs |
| Abstrakt: |
Presents a study that determined the spatial dependence of the bulk free-carrier lifetime in cast polycrystalline silicon ingots from contactless measurements of optically modulated free-carrier infrared absorption. Information on unmodulated infrared probe transmission; Details on optically modulated infrared transmission measurements; Discussion on modulation factor versus pump wavelength, energy and depth. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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