| Autor: |
Mogro-Campero, A., Love, R. P., Lewis, N., Hall, E. L., McConnell, M. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/1986, Vol. 60 Issue 6, p2103, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Presents a study that examined the microstructure and oxygen-concentration profile of a silicon-on-insulator structure as a function of annealing temperature from 1150°celsius to 1295°celsius. Design of the study and experimental procedure; Effect of the annealing temperature on the structure; Features after annealing. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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