| Autor: |
Jeanjean, P., Sicart, J., Sellitto, P., Robert, J. L., Bustarret, E., Grieshaber, W., Cali, J., Le Berre, M., Lemiti, M., Pinard, P., Conedera, V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1994, Vol. 76 Issue 8, p4682, 7p, 1 Black and White Photograph, 2 Charts, 10 Graphs |
| Abstrakt: |
Investigates the structural, electrical and piezoresistive properties of in situ boron-doped thin silicon layers deposited by plasma-enhanced chemical-vapor deposition on oxidized silicon substrates and subjected to a rapid thermal anneal. Sample preparation and experimental methods; Stress and structure of the films; Effect of doping on optical properties. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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