| Autor: |
Park, Hyung-Ho, Kwon, Kwang-Ho, Lee, Jong-Lam, Suh, Kyung-Soo, Kwon, Oh-Joon, Cho, Kyoung-Ik, Park, Sin-Chong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1994, Vol. 76 Issue 8, p4596, 7p, 2 Diagrams, 1 Chart, 11 Graphs |
| Abstrakt: |
Presents information on a study that examined the surface properties of an underlying silicon substrate after reactive ion etching of SiO[sub2] in CHF[sub3]/C[sub2]F[sub6] gas plasmas. Introduction to reaction ion etching of SiO[sub2] on silicon in a fluorocarbon plasma; Experimental results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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