| Autor: |
Chae, H. J., Kim, C. H., Kwon, S. D., Lee, J. B., Choe, B. D., Lim, H., Lee, Hyung Jae |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3589, 4p, 4 Graphs |
| Abstrakt: |
Presents a study which investigated the effects of heat treatment on the characteristics of the Schottky diodes. Factors that influenced the performance of microwave metal semiconductor field effect transistor devices; Origin and generation condition of interface states; Annealing method for the Au/InGaP Schottky diode; Derivation of formulas for the distribution of interface states. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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