| Autor: |
Ling, L., Radzimski, Z. J., Abe, T., Shimura, F. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3610, 7p, 2 Diagrams, 2 Charts, 7 Graphs |
| Abstrakt: |
Presents a study which investigated the effect of bonded interface location on the electrical properties of silicon-on-insulator (SOI) wafers. Characteristics of the metal-oxide-silicon (MOS) capacitors; Influence of the properties of SOI to the bonding process; Fabrication of MOS-I structures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
