Be+ ion implantation in Ga0.96Al0.04Sb epitaxial layers.
| Autor: | Pérotin, M., Gouskov, L., Luquet, H., Abiale Abi, P., Sabir, A., Pérez, A. |
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| Zdroj: | Journal of Applied Physics; 10/15/1990, Vol. 68 Issue 8, p3856, 5p, 2 Charts, 9 Graphs |
| Abstrakt: | Presents a study which implanted beryllium ions into tellurium-doped Ga[sub0.96]Al[sub0.04]Sb epitaxial layers grown by liquid phase epitaxy. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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