Rapid thermal annealing of high concentration mixed As/In- and P/In-implanted silicon single crystals.

Autor: Shiryaev, S. Yu., Nylandsted Larsen, A., Safronov, N.
Předmět:
Zdroj: Journal of Applied Physics; 10/15/1990, Vol. 68 Issue 8, p3953, 4p, 4 Graphs
Abstrakt: Presents a study which examined the effect of group-V donor impurities on the behavior of indium atoms impanted into silicon single crystals. Experimental design; Results and discussion; Conclusion.
Databáze: Complementary Index