Diffusion kinetics of Si in GaAs and related defect chemistry.
| Autor: | Lee, K. H., Stevenson, D. A., Deal, M. D. |
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| Zdroj: | Journal of Applied Physics; 10/15/1990, Vol. 68 Issue 8, p4008, 6p, 6 Graphs |
| Abstrakt: | Presents a study which investigated the diffusion of silicon in gallium arsenide. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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