| Autor: |
Yang, L., Wu, M. C., Chen, J. F., Chen, Y. K., Snider, G. L., Cho, A. Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1990, Vol. 68 Issue 8, p4286, 4p |
| Abstrakt: |
Presents information on a study which performed capacitance-voltage measurements on the InAs/AlSab/GaSb interband tunneling diode at various frequencies. Structure of the tunneling diode; Details of the conduction band and the associated bound states found in the numerical algorithm; Extraction of the built-in voltage using the capacitance-voltage data under the depletion condition. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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