Electronic bonding of buried interfaces determined by soft x-ray emission spectroscopy.

Autor:	Perera, R. C. C., Zhang, C. H., Callcott, T. A., Ederer, D. L.
Předmět:	CHEMICAL bonds ATOMS SILICON CARBON X-ray spectroscopy
Zdroj:	Journal of Applied Physics; 10/15/1989, Vol. 66 Issue 8, p3676, 6p, 1 Diagram, 1 Chart, 3 Graphs
Abstrakt:	Presents a study that investigated the electronic bonding of atoms at the silicon-carbon buried interfaces using x-ray emission spectroscopy. Background on a theory of multilayer emission; Methodology; Examination of the emission spectra of silicon.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu